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Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy
The effect of increasing GaP and InGaP insertion layers thickness (0-4) monolayers (MLs) to improve the structural and optical properties of InP self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by ...
Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer
Quantum dots in InP/GaAs system were grown by low pressure MOVPE via the StranskiKrastanow growth mode. In order to control the dots diameter and improve the size uniformity and photoluminescence (PL) emission, the ternary ...
The Effect of Thin Gap Insertion Layer on INP Nanostructures by Metal-Organic Vapor Phase Epitaxy
The influence of thin GaP insertion layers (0 – 4) monolayers (MLs) on the properties of InP self-assembled quantum dots (SAQDs) embedded in In0.49Ga0.51P on GaAs (001) substrate grown by metal-organic vapor phase epitaxy ...