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Please use this identifier to cite or link to this item: http://uyr.uy.edu.mm/handle/123456789/41
dc.contributor.authorSoe Soe Han
dc.contributor.authorPanyakeow, Somsak
dc.contributor.authorRatanathammaphan, Somchai
dc.contributor.authorHigo, Akio
dc.contributor.authorYunpeng, Wang
dc.contributor.authorDeura, Momoko
dc.contributor.authorSugiyama, Masakasu
dc.contributor.authorNakano, Yoshiaki
dc.date.accessioned2016-11-04T04:46:11Z
dc.date.available2016-11-04T04:46:11Z
dc.date.issued2012
dc.identifierDOI 10.1002/cjce.21648
dc.identifier.urihttp://uyr.uy.edu.mm/handle/123456789/41
dc.descriptionThe Canadian Journal of Chemical Engineering Volume 9999, 2012
dc.description.abstractThe effect of thin GaP insertion layers on the structural and optical properties of InP/In0.49Ga0.51P self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metal–organic vapour phase epitaxy has been reported. The properties of InP/In0.49Ga0.51P SAQDs are modified when a thin (1–4 ML) GaP layer is inserted underneath the InP quantum dots (QDs). Deposition of the GaP insertion layer affects the dot dimension and improves the size uniformity. The density, dimension and uniformity of InP QDs strongly depend on the GaP insertion layer thickness. This variation in QD size is a result of a material nucleation effect caused by atomic intermixing between the InP QDs and underlying GaP insertion layer and surface energy. The insertion of GaP layer led to tuning the emission wavelength and narrowing of full width at half maximum (FWHM) when they are characterised by PL measurements at room temperature.
dc.subjectInP
dc.subjectself-assembled quantum dots (SAQDs)
dc.subjectmetal–organic vapour phase epitaxy (MOVPE)
dc.subjectatomic force microscope (AFM)
dc.subjectphotoluminescence (PL)
dc.titleThe Effect of Thin Gap Insertion Layer On Inp Nanostructure Grown by Metal–Organic Vapour Phase Epitaxylanguage
dc.typearticle


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