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EFFECT OF THICKNESS OF GaP ULTRA-THIN INSERTION LAYER ON THE STRUCTURAL AND OPTICAL PROPERTIES OF lnP QUANTUM DOTS
- A systematic study of thickness of Gal' insertion layers on the structural properties of InP quantum dots (QDs) was investigated. All samples were grown by conventional solid-source molecular beam epitaxy using a Gap decomposition cell was used as P2 source for P-based materials. The density of InP QDs directly grown on In0.48Gao.52P layer is 4.8x10-10 cm-2 , and decrease to 2.4-3.9x I0-10 cm-2 on GaP layers which depends on the thickness of GaP layer, The effect of GaP insertion layer on the size distribution of InP QDs is also studied in this work.
Soe Soe Han
- Proceedings of symposium 0 of the International Conference on Materials for Advanced Technologies (ICMAT)