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Please use this identifier to cite or link to this item: http://uyr.uy.edu.mm/handle/123456789/44
dc.contributor.authorSoe Soe Han
dc.contributor.authorPanyakeow, Somsak
dc.contributor.authorRatanathammaphan, Somchai
dc.contributor.authorHigo, Akio
dc.contributor.authorYunpeng, Wang
dc.contributor.authorDeura, Momoko
dc.contributor.authorSugiyama, Masakasu
dc.contributor.authorNakano, Yoshiaki
dc.date.accessioned2016-11-04T09:54:40Z
dc.date.available2016-11-04T09:54:40Z
dc.date.issued2010
dc.identifier.urihttp://uyr.uy.edu.mm/handle/123456789/44
dc.descriptionProceedings of the Second International Conference on Science and Engineering organized by Ministry of Science and Technology on December 2-3, 2010 at Sedona hotel, Yangon, Myanmar
dc.description.abstractThe effect of increasing GaP and InGaP insertion layers thickness (0-4) monolayers (MLs) to improve the structural and optical properties of InP self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metal-organic vapor phase epitaxy was reported. The growth of thin GaP and InGaP insertion layers between In0.49Ga0.51P buffer and InP QDs layer reduced the mean height and size fluctuation and increased the density of InP QDs. A maximum QDs density of 4.2 × 109 cm-2 and better and smaller QDs size and uniformity had been achieved at 2 ML GaP and InGaP insertion layers. The blue-shift of the PL peak was enhanced by insertion of GaP and InGaP layers. Due to InGaP insertion layer, a more blue-shift of the PL peak emission was also observed. InGaP insertion layer led to better QDs quality and higher PL intensity compare to that of GaP insertion layer.
dc.subjectInP
dc.subjectGaP
dc.subjectInGaP
dc.subjectSelf-assembled Quantum Dots (SAQDs)
dc.subjectMetal-Organic Vapor Phase Epitaxy (MOVPE)
dc.subjectAtomic Force Microscopy (AFM)
dc.subjectPhotoluminescence (PL)
dc.titleEffect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxylanguage
dc.typeconferenceObject


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