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Effects of GaP Insertion Layer on the Properties of InP Nanostructures by Metal-Organic Vapor Phase Epitaxy
- The influence of thin GaP insertion layers (0 – 4) monolayers (MLs) on the properties of InP self-assembled quantum dots (SAQDs) embedded in In0.49Ga0.51P matrix on GaAs (001) substrate grown by metal-organic vapor phase epitaxy was reported. In order to reduce the dots diameter and improve the size uniformity and photoluminescence (PL) emission, GaP layers thickness (0-4) monolayers (MLs) were inserted. The growth of thin GaP insertion layer (IL) between In0.49Ga0.51P matrix and InP QDs layer reduced the mean height and size fluctuation and increased the density of InP QDs. The room-temperature (RT) PL emission could be observed around 780 nm red spectral range. The blue-shift of the PL peak was enhanced with thicker GaP insertion layer. The measurement of lowtemperature (20 - 250 K) shows dependence of PL intensity on temperature.
Soe Soe Han