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The Effect of Thin Gap Insertion Layer on INP Nanostructures by Metal-Organic Vapor Phase Epitaxy
- The influence of thin GaP insertion layers (0 – 4) monolayers (MLs) on the properties of InP self-assembled quantum dots (SAQDs) embedded in In0.49Ga0.51P on GaAs (001) substrate grown by metal-organic vapor phase epitaxy was reported. The growth of thin GaP insertion layer between In0.49Ga0.51P buffer and InP QDs layer reduced the mean height and size fluctuation and slightly increased the density of InP QDs. A maximum QDs density of 4.2 × 109 cm-2 and smaller QDs size and better uniformity had been achieved at 2 ML GaP insertion layer. The blue-shift of the PL peak was enhanced with thicker GaP insertion layer. A blue-shift of the peak emission wavelength of InP QDs from 814 nm to 780 nm was also observed as the GaP insertion layer thickness from 0 ML to 2 ML but there was no further blue-shift with further increase of the GaP insertion layer thickness.
Soe Soe Han