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Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile Memory Device Application
- Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated.The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800ºC) could function as a nonvolatile memory.
Mar Lar Win