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Low-Temperature Micro-PL Measurements ofInAs Binary Quantum Dots on GaAsSubstrate
- Optical properties of InAs binary quantum dot(bi-QD) molecules grown on the (001) GaAs substrate were measured by means of temperature- andexcitation-power-dependent photoluminescence (PL)spectroscopy. It was observed that the shape and peak position of the PL spectra changed with the temperature and with the excitation power. It wa salso found that the linear polarization degree of thebi-QD PL signal changed with temperature. The temperature-dependent PL described that the linear polarization degree of bi-QDs is closely related to the carrier dynamics.
Nan Thidar Chit Swe
Tu, Charles W.
- ECTI Transactions on Electrical Engineering, Electronics, and Communications